ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,309, issued on May 13, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).
"Memory device" was invented by Jungmyung Kang (Hwaseong-si, South Korea), Hoyoung Tang (Suwon-si, South Korea), Inhak Lee (Hwaseong-si, South Korea), Sangyeop Baeck (Yongin-si, South Korea) and Dongwook Seo (Hwaseong-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a bit cell array including a plurality of bit cells connected to a first auxiliary line to which a cell power voltage is supplied; a write driver configured to apply a bit line voltage corresponding to write data to a bit line extending in a column direct...