US Patent Issued to SAMSUNG ELECTRONICS on March 4 for "Method of forming a static random-access memory (SRAM) cell with fin field effect transistors" (South Korean Inventors)

ALEXANDRIA, Va., March 5 -- United States Patent no. 12,243,874, issued on March 4, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Method of forming a static random-access memory (SRAM) cell with fin field effect transistors" was invented by Kyungin Choi (Seoul, South Korea), Jinbum Kim (Seoul, South Korea), Haejun Yu (Osan-si, South Korea) and Seung Hun Lee (Hwaseong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: a first active pattern on a substrate and including a first active fin and a second active fin; a device isolation layer defining the first active pattern; a gate electrode crossing the first active pattern; a first source/dra...