US Patent Issued to SAMSUNG ELECTRONICS on March 4 for "Integrated circuit devices including a common gate electrode and methods of forming the same" (New York Inventors)

ALEXANDRIA, Va., March 5 -- United States Patent no. 12,243,946, issued on March 4, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (South Korea).

"Integrated circuit devices including a common gate electrode and methods of forming the same" was invented by Sooyoung Park (Clifton Park, N.Y.), Seunghyun Song (Albany, N.Y.), Byounghak Hong (Albany, N.Y.) and Seungchan Yun (Waterford, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Integrated circuit devices and methods of forming the same are provided. Integrated circuit devices may include a first channel layer including a first surface, a second channel layer that is spaced apart from the first channel layer in a first direction and includes a second surfac...