US Patent Issued to SAMSUNG ELECTRONICS on March 4 for "DRAM assist error correction mechanism for DDR SDRAM interface" (South Korean, American Inventors)

ALEXANDRIA, Va., March 5 -- United States Patent no. 12,242,344, issued on March 4, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"DRAM assist error correction mechanism for DDR SDRAM interface" was invented by Dimin Niu (Sunnyvale, Calif.), Mu-Tien Chang (San Jose, Calif.), Hongzhong Zheng (Los Gatos, Calif.), Hyun-Joong Kim (Hwaseong-si, South Korea), Won-hyung Song (Osan-si, South Korea) and Jangseok Choi (Campbell, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of correcting a memory error of a dynamic random-access memory module (DRAM) using a double data rate (DDR) interface, the method includes conducting a memory transaction including multiple bursts with a mem...