US Patent Issued to SAMSUNG ELECTRONICS on March 25 for "Vertical-channel cell array transistor structure and dram device including the same" (South Korean Inventors)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,262,527, issued on March 25, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Vertical-channel cell array transistor structure and dram device including the same" was invented by Changseok Lee (Gwacheon-si, South Korea), Sangwon Kim (Seoul, South Korea), Changhyun Kim (Seoul, South Korea), Kyung-Eun Byun (Seongnam-si, South Korea) and Eunkyu Lee (Yongin-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are a vertical-channel cell array transistor structure and a dynamic random-access memory (DRAM) device including the same. The vertical-channel cell array transistor structure includes a semiconductor subst...