ALEXANDRIA, Va., March 26 -- United States Patent no. 12,261,120, issued on March 25, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Three-dimensional (3D) semiconductor memory device and electronic system including the same" was invented by Haemin Lee (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A 3D semiconductor memory device includes a peripheral circuit structure, an intermediate insulating layer and a cell array structure. The cell array structure includes a first substrate including a cell array region and a connection region; a stack structure comprising electrode layers and electrode interlayer insulating layers alternately stacked on the first substr...