ALEXANDRIA, Va., March 26 -- United States Patent no. 12,261,220, issued on March 25, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).
"Semiconductor devices and methods of manufacturing the same" was invented by Woocheol Shin (Seoul, South Korea), Sunggi Hur (Hwaseong-si, South Korea), Sangwon Baek (Hwaseong-si, South Korea) and Junghan Lee (Anyang-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes channels, a gate structure, and a source/drain layer. The channels are stacked in a vertical direction. Each channel extends in a first direction. The gate structure extends in a second direction. The gate structure covers the channels. The sourc...