US Patent Issued to SAMSUNG ELECTRONICS on March 25 for "Nonvolatile memory device and method of operating nonvolatile memory" (South Korean Inventors)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,260,923, issued on March 25, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Nonvolatile memory device and method of operating nonvolatile memory" was invented by Hyunee Lee (Suwon-si, South Korea) and Jongyeol Park (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A nonvolatile memory device includes a memory cell array, an address decoder, a leakage detector and a control circuit. The memory cell array includes a plurality of mats corresponding to different bit-lines. The leakage detector is commonly coupled to the plurality of mats at a sensing node in the address decoder. The control circuit performs a fir...