US Patent Issued to SAMSUNG ELECTRONICS on March 25 for "Methods of manufacturing semiconductor devices by etching active fins using etching masks and forming source/drain layers on the active fins" (South Korean Inventors)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,261,087, issued on March 25, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Methods of manufacturing semiconductor devices by etching active fins using etching masks and forming source/drain layers on the active fins" was invented by Min-Chul Sun (Yongin-si, South Korea), Myeong-Cheol Kim (Suwon-si, South Korea) and Kyoung-Sub Shin (Seongnam-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "In a method of manufacturing a semiconductor device, first to third active fins are formed on a substrate. Each of the first to third active fins extends in a first direction, and the second active fin, the first active fin, and ...