ALEXANDRIA, Va., March 26 -- United States Patent no. 12,260,164, issued on March 25, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Method for designing pattern layout including oblique edges and method for manufacturing semiconductor device using the same" was invented by Hungbae Ahn (Hwaseong-si, South Korea), Sangoh Park (Hwaseong-si, South Korea) and Jinho Lee (Hwaseong-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A pattern layout design method includes performing optical proximity correction (OPC) for a mask layout, thereby creating a corrected layout. Creation of the corrected layout includes creating a first corrected layout through grid snapping for an obliq...