ALEXANDRIA, Va., March 26 -- United States Patent no. 12,262,641, issued on March 25, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).
"Magnetic memory device and method of fabricating the same" was invented by Kyungil Hong (Suwon-si, South Korea), Jungmin Lee (Gwangmyeong-si, South Korea), Younghyun Kim (Seoul, South Korea), Junghwan Park (Seoul, South Korea), Heeju Shin (Seoul, South Korea) and Se Chung Oh (Yongin-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of fabricating a magnetic memory device comprises forming, on a substrate, a data storage structure including a bottom electrode, a magnetic tunnel junction pattern, and a top electrode, forming a firs...