ALEXANDRIA, Va., March 26 -- United States Patent no. 12,262,648, issued on March 25, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).
"Magnetic memory device" was invented by Byongguk Park (Daejeon, South Korea), Jeong-Heon Park (Hwaseong-si, South Korea), Kyung-Jin Lee (Daejeon, South Korea) and Jeongchun Ryu (Daejeon, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A magnetic memory device includes a conductive line extending in a first direction, a magnetic tunnel junction structure on a first surface of the conductive line, the magnetic tunnel junction structure comprising at least two magnetic patterns and a barrier pattern between the at least two magnetic patterns, ...