US Patent Issued to SAMSUNG ELECTRONICS on March 25 for "24 to 30GHZ wide band CMOS power amplifier with turn-off mode high impedance" (California Inventors)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,261,574, issued on March 25, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Yongin-si, South Korea).

"24 to 30GHZ wide band CMOS power amplifier with turn-off mode high impedance" was invented by Che-Chun Kuo (San Jose, Calif.), Siu-Chuang Ivan Lu (San Jose, Calif.), Sang Won Son (Palo Alto, Calif.) and Xiaohua Yu (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A wide band matching network for power amplifier impedance matching, the wide band matching network comprising: a power amplifier transistor connected to an output network; the output network including: a series capacitor; an on-chip transformer connected to the capacitor in seri...