ALEXANDRIA, Va., March 19 -- United States Patent no. 12,255,065, issued on March 18, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (South Korea).
"Semiconductor devices including a support pattern on a lower electrode structure" was invented by Hyun-Suk Lee (Suwon-si, South Korea), Jungoo Kang (Seoul, South Korea), Gihee Cho (Yongin-si, South Korea) and Sanghyuck Ahn (Daegu, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor device includes: forming electrode holes by etching a mold structure including a mold layer and a support layer which are stacked on a substrate; forming lower electrode pillars filling the electrode holes; etching a portion of the suppor...