ALEXANDRIA, Va., March 19 -- United States Patent no. 12,255,139, issued on March 18, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).
"Semiconductor devices" was invented by Anthony Dongick Lee (Hwaseong-si, South Korea), Sangcheol Na (Seoul, South Korea), Kichul Park (Suwon-si, South Korea), Sungyup Jung (Seoul, South Korea) and Youngwoo Cho (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device including a first insulating structure on a substrate and including a first etch stop layer and a first interlayer insulating layer on the first etch stop layer, a second insulating structure on the first insulating structure and including a second etch ...