US Patent Issued to SAMSUNG ELECTRONICS on March 18 for "Semiconductor device with multiple gate electrodes featuring asymmetric contact widths" (South Korean Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,256,567, issued on March 18, was assigned to SAMSUNG ELECTRONICS Co. LTD. (South Korea).

"Semiconductor device with multiple gate electrodes featuring asymmetric contact widths" was invented by Sang-Wook Park (Hwaseong-si, South Korea), Yun Kyoung Song (Hwaseong-si, South Korea), Bong Keun Kim (Seoul, South Korea) and Se Jin Park (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first active pattern that extends in a first horizontal direction, a second active pattern which extends in the first horizontal direction, and is spaced apart from the first active pattern by a first distance in a second horiz...