US Patent Issued to SAMSUNG ELECTRONICS on March 18 for "Semiconductor device including backside contact structure having positive slope and method of forming thereof" (New York, Virginia Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,255,248, issued on March 18, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor device including backside contact structure having positive slope and method of forming thereof" was invented by Wonhyuk Hong (Clifton Park, N.Y.), Jongjin Lee (Clifton Park, N.Y.), Taesun Kim (Ballston Spa, N.Y.), Myunghoon Jung (Clifton Park, N.Y.) and Kang-ill Seo (Springfield, Va.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A system and a method are disclosed for forming a bottle-neck shaped backside contact structure in a semiconductor device, wherein the bottle-neck shaped backside contact structure has a first side partially withi...