US Patent Issued to SAMSUNG ELECTRONICS on March 18 for "Semiconductor device channel layers stacked vertically and method of fabricating the same" (South Korean Inventor)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,256,566, issued on March 18, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor device channel layers stacked vertically and method of fabricating the same" was invented by Jinbum Kim (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes an active pattern on a substrate, source/drain patterns on the active pattern, a plurality of channel layers stacked on the active pattern to be vertically spaced apart from each other and connecting the source/drain patterns with each other, a gate electrode between the source/drain patterns to cross the active pattern and to surround the c...