ALEXANDRIA, Va., March 19 -- United States Patent no. 12,254,945, issued on March 18, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Neuromorphic device" was invented by Youngnam Hwang (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A neuromorphic device includes a memory cell array including first resistive memory cells connected to word lines, bit lines and source lines, second resistive memory cells connected to the word lines, at least one redundancy bit line and at least one redundancy source line, third resistive memory cells connected to at least one redundancy word line, the bit lines and the source lines. The memory cell array stores data corresponding t...