US Patent Issued to SAMSUNG ELECTRONICS on March 18 for "Methods of forming fin-on-nanosheet transistor stacks" (New York Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,255,099, issued on March 18, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (South Korea).

"Methods of forming fin-on-nanosheet transistor stacks" was invented by Gunho Jo (Schenectady, N.Y.), Ki-il Kim (Clifton Park, N.Y.) and Byounghak Hong (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods of forming a plurality of transistor stacks are provided. A method of forming a plurality of transistor stacks includes etching a plurality of nanosheets, using a plurality of spacers that are on sidewalls of a plurality of semiconductor fins as an etch mask, to provide a plurality of spaced-apart nanosheet stacks that each have at least one of the...