ALEXANDRIA, Va., March 19 -- United States Patent no. 12,254,922, issued on March 18, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).
"Memory device including switching material and phase change material" was invented by Minwoo Choi (Suwon-si, South Korea), Young Jae Kang (Suwon-si, South Korea), Bonwon Koo (Suwon-si, South Korea), Yongyoung Park (Suwon-si, South Korea), Hajun Sung (Suwon-si, South Korea), Dongho Ahn (Suwon-si, South Korea), Kiyeon Yang (Suwon-si, South Korea), Wooyoung Yang (Suwon-si, South Korea) and Changseung Lee (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a memory cell including a selection layer and a phase cha...