ALEXANDRIA, Va., March 12 -- United States Patent no. 12,249,651, issued on March 11, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Semiconductor device" was invented by Hyuncheol Kim (Seoul, South Korea), Yongseok Kim (Suwon-si, South Korea), Dongsoo Woo (Seoul, South Korea) and Kyunghwan Lee (Seoul, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: a channel; a gate structure on the channel; a first source/drain arranged at a first end of the channel and including a metal; a first tunable band-gap layer arranged between the channel and the first source/drain and having a band gap that changes according to stress; a first electrostrictive la...