ALEXANDRIA, Va., March 12 -- United States Patent no. 12,249,984, issued on March 11, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Integrated circuit including power gating circuit" was invented by Changyeon Yu (Hwaseong-si, South Korea), Pansuk Kwak (Goyang-si, South Korea) and Daeseok Byeon (Seongnam-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit includes a logic circuit comprising a plurality of logic transistors, the logic circuit comprising a plurality of logic gate lines extending in a first direction; and a power gating circuit comprising a plurality of power gating transistors, the power gating circuit comprising a first power gate line ...