ALEXANDRIA, Va., March 12 -- United States Patent no. 12,249,606, issued on March 11, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Integrated circuit device" was invented by Minhee Choi (Suwon-si, South Korea), Keunhwi Cho (Seoul, South Korea), Myunggil Kang (Suwon-si, South Korea), Seokhoon Kim (Suwon-si, South Korea), Dongwon Kim (Seongnam-si, South Korea), Pankwi Park (Incheon, South Korea) and Dongsuk Shin (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit device includes a fin-type active area along a first horizontal direction on a substrate, a device isolation layer on opposite sidewalls of the fin-type active area, a gate structure al...