ALEXANDRIA, Va., June 4 -- United States Patent no. 12,324,166, issued on June 3, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).
"Resistive memory device" was invented by Chungman Kim (Suwon-si, South Korea), Bonwon Koo (Suwon-si, South Korea), Dongho Ahn (Hwaseong-si, South Korea), Kiyeon Yang (Seoul, South Korea), Zhe Wu (Seoul, South Korea) and Chang Seung Lee (Yongin-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A resistive memory device including a resistive memory pattern; and a selection element pattern electrically connected to the resistive memory pattern, the selection element pattern including a chalcogenide switching material and at least one metallic mater...