US Patent Issued to SAMSUNG ELECTRONICS on June 3 for "Reduced word line voltage during discharge phase of read operation" (Indian Inventor)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,322,446, issued on June 3, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Reduced word line voltage during discharge phase of read operation" was invented by Himanshu Saxena (Karnataka, India).

According to the abstract* released by the U.S. Patent & Trademark Office: "An OTP memory includes a plurality of bitcells, a plurality of bitlines, each bitline coupled to the plurality of bitcells, and a wordline generation circuit coupled to each of the plurality of bitcells. The wordline generation circuit is configured to control a wordline voltage of at least one selected bitcell of the plurality of bitcells to discharge current of at least one bitline coupled to t...