ALEXANDRIA, Va., June 4 -- United States Patent no. 12,324,277, issued on June 3, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Nitride semiconductor light emitting device and display device using the same" was invented by Donggun Lee (Hwaseong-si, South Korea) and Jonguk Seo (Hwaseong-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A nitride semiconductor light emitting device includes: a semiconductor laminate having a first conductivity-type semiconductor layer and a lattice buffer layer in which InGaN layers and GaN layers are alternately stacked, the semiconductor laminate having a columnar body portion protruding through etching of a peripheral region, an insulat...