US Patent Issued to SAMSUNG ELECTRONICS on June 3 for "Multi-channel field effect transistors with enhanced multi-layered source/drain regions" (South Korean Inventors)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,324,195, issued on June 3, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (South Korea).

"Multi-channel field effect transistors with enhanced multi-layered source/drain regions" was invented by Sanggil Lee (Ansan-si, South Korea), Jungtaek Kim (Yongin-si, South Korea), Dohyun Go (Suwon-si, South Korea), Pankwi Park (Incheon, South Korea), Dongsuk Shin (Suwon-si, South Korea), Namkyu Cho (Yongin-si, South Korea), Ryong Ha (Seoul, South Korea) and Yang Xu (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a semiconductor active region having a vertical stack of multiple spaced-apart semiconductor channel regio...