US Patent Issued to SAMSUNG ELECTRONICS on June 24 for "Transistor structure including oxide semiconductor pattern surrounding bottom and sidewall of gate and semiconductor device using the same" (South Korean Inventors)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,342,530, issued on June 24, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Transistor structure including oxide semiconductor pattern surrounding bottom and sidewall of gate and semiconductor device using the same" was invented by Jaepil Lee (Seoul, South Korea) and Minhee Cho (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor structure including an active pattern defined by a first isolation pattern on a substrate, a second isolation pattern at an upper portion of the active pattern, a gate structure extending through the active pattern and the first isolation pattern, at least a lower portion ...