US Patent Issued to SAMSUNG ELECTRONICS on June 24 for "Static random-access memory (SRAM) device including three-dimensional stacked (3DS) field-effect transistor (FET) and layout thereof" (South Korean Inventors)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,342,521, issued on June 24, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Static random-access memory (SRAM) device including three-dimensional stacked (3DS) field-effect transistor (FET) and layout thereof" was invented by Kyungsoo Kim (Hwaseong-si, South Korea) and Kyenhee Lee (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A static random-access memory (SRAM) device including a three-dimensional structured (3DS) field-effect transistor (FET) having a minimized planar area and a simple wiring connection structure includes a semiconductor substrate, a first fin active region extending on the semiconductor sub...