US Patent Issued to SAMSUNG ELECTRONICS on June 24 for "Stacked integrated circuit devices" (South Korean, American Inventors)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,341,085, issued on June 24, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (South Korea).

"Stacked integrated circuit devices" was invented by Jung Ho Do (Hwaseong-si, South Korea) and Seungyoung Lee (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Stacked integrated circuit devices may include standard cells including a first standard cell in a first row and a second standard cell in a second row immediately adjacent to the first row. Each of the standard cells may include an upper transistor and a lower transistor. The upper transistor may include an upper active region, an upper gate structure, and an upper source/drain region. The lower tr...