ALEXANDRIA, Va., June 25 -- United States Patent no. 12,340,867, issued on June 24, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (South Korea).

"Memory device including on-die-termination circuit" was invented by Eun-Ji Kim (Suwon-si, South Korea), Jung-June Park (Seoul, South Korea), Jeong-Don Ihm (Seongnam-si, South Korea), Byung-Hoon Jeong (Hwaseong-si, South Korea) and Young-Don Choi (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes; a first memory chip including a first on-die Termination (ODT) circuit comprising a first ODT resistor, a second memory chip including a second ODT circuit comprising a second ODT resistor, at least one chip enable signal pin that re...