US Patent Issued to SAMSUNG ELECTRONICS on June 24 for "Memory device for detecting fail cell and operation method thereof" (South Korean Inventors)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,340,849, issued on June 24, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Memory device for detecting fail cell and operation method thereof" was invented by Jooyong Park (Suwon-si, South Korea), Wontaeck Jung (Suwon-si, South Korea), Nayeon Kim (Suwon-si, South Korea), Jiwon Seo (Suwon-si, South Korea) and Seungyong Hyun (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "An operation method of a memory device for programming memory cells to a plurality of program states includes providing a series of program pulses to selected memory cells, performing a first verification operation of verifying a target progr...