ALEXANDRIA, Va., June 25 -- United States Patent no. 12,341,084, issued on June 24, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Integrated circuit device with through-electrode and electrode landing pad, and semiconductor package including the same" was invented by Hojin Lee (Hwaseong-si, South Korea), Kwangjin Moon (Hwaseong-si, South Korea) and Seungha Oh (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit device includes a semiconductor substrate having a first surface and a second surface opposite to the first surface, a first insulating layer on the first surface of the semiconductor substrate, an electrode landing pad positioned on the fir...