ALEXANDRIA, Va., June 25 -- United States Patent no. 12,342,531, issued on June 24, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).
"Integrated circuit device" was invented by Suncheul Kim (Hwaseong-si, South Korea), Youngsang Lee (Hwaseong-si, South Korea), Yunchul Shin (Seongnam-si, South Korea) and Donghoon Han (Seoul, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit device includes a substrate including an active region defined by a device isolation layer, the substrate defining a gate trench extending across the active region, a gate dielectric layer conformally covering an inner surface of the gate trench, and a gate electrode filling the gate tr...