US Patent Issued to SAMSUNG ELECTRONICS on June 17 for "Three-dimensional stacked semiconductor device including simplified source/drain contact area" (New York, Virginia Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,283, issued on June 17, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Three-dimensional stacked semiconductor device including simplified source/drain contact area" was invented by Keumseok Park (Slingerlands, N.Y.), Edward Namkyu Cho (Albany, N.Y.) and Kang-ill Seo (Springfield, Va.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a semiconductor device which includes: a 1st source/drain pattern for a 1st transistor; a 2nd source/drain pattern for a 2nd transistor, above the 1st source/drain pattern, the 2nd source/drain pattern having a smaller width than the 1st source/drain pattern in a channel-width direction;...