ALEXANDRIA, Va., June 19 -- United States Patent no. 12,333,148, issued on June 17, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (South Korea).
"Semiconductor memory devices that perform burst operations" was invented by Jinhoon Jang (Suwon-si, South Korea) and Kyungryun Kim (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes a memory cell array and a plurality of data input/output (I/O) pins. The plurality of data I/O pins is configured to receive write data to be stored in the memory cell array or to output read data stored in the memory cell array. The semiconductor memory device is configured to perform a burst operation in which a single data set ...