ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,242, issued on June 17, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Gyeonggi-do, South Korea).
"Semiconductor devices including protruding insulation portions between active fins" was invented by Shigenobu Maeda (Seongnam-si, South Korea), Hee-Soo Kang (Seoul, South Korea), Sang-Pil Sim (Seongnam-si, South Korea) and Soo-Hun Hong (Gunpo-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device can include a field insulation layer including a planar major surface extending in first and second orthogonal directions and a protruding portion that protrudes a particular distance from the major surface relative to the first a...