ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,177, issued on June 17, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (South Korea).

"Nonvolatile memory device and method for fabricating the same" was invented by Soodoo Chae (Seongnam-si, South Korea), Myoungbum Lee (Seoul, South Korea), HuiChang Moon (Yongin-si, South Korea), Hansoo Kim (Suwon-si, South Korea), JinGyun Kim (Yongin-si, South Korea), Kihyun Kim (Hwaseong-si, South Korea), Siyoung Choi (Seongnam-si, South Korea) and Hoosung Cho (Yongin-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A three-dimensional nonvolatile memory device and a method for fabricating the same include a semiconductor substrate, a plurality of act...