ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,178, issued on June 17, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Nonvolatile memory device" was invented by Kyunghwa Yun (Hwaseong-si, South Korea), Chanho Kim (Seoul, South Korea) and Dongku Kang (Seongnam-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A nonvolatile memory device includes a peripheral circuit including a first active region and a memory block including a second active region on the peripheral circuit. The memory block includes a vertical structure including pairs of a first insulating layer and a first conductive layer, a second insulating layer on the vertical structure, a second condu...