ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,202, issued on June 17, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Integrated circuit device" was invented by Intak Jeon (Seoul, South Korea), Hanjin Lim (Seoul, South Korea), Hyungsuk Jung (Suwon-si, South Korea) and Jaehyoung Choi (Hwaseong-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit device includes: a lower electrode disposed on a substrate; an insulating support pattern supporting the lower electrode; a dielectric film surrounding the lower electrode and the insulating support pattern; a high-k interface layer arranged between the lower electrode and the dielectric film and bet...