ALEXANDRIA, Va., June 19 -- United States Patent no. 12,334,157, issued on June 17, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (South Korea).

"Integrated circuit device" was invented by Jang-gn Yun (Hwaseong-si, South Korea) and Jae-duk Lee (Seongnam-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit device includes channel structures extending from a substrate in a vertical direction, memory cell strings disposed along the plurality of channel structures, gate lines spaced apart from one another in the vertical direction and including erase control lines and string selection lines, and driving transistors including erase control driving transistors connected to the erase ...