ALEXANDRIA, Va., June 18 -- United States Patent no. 12,327,757, issued on June 10, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Three-dimensional semiconductor device" was invented by Sunil Shim (Seoul, South Korea), Shinhwan Kang (Seoul, South Korea) and Younghwan Son (Hwaseong-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a three-dimensional semiconductor device including a horizontal semiconductor layer including a plurality of well regions having a first conductivity and a separation impurity region having a second conductivity, and a plurality of cell array structures provided on the well regions of the horizontal semiconductor layer, respectively...