ALEXANDRIA, Va., June 18 -- United States Patent no. 12,328,921, issued on June 10, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).
"Semiconductor device and method of fabricating the same" was invented by Namkyu Cho (Yongin-si, South Korea), Sanggil Lee (Ansan-si, South Korea), Seokhoon Kim (Suwon-si, South Korea) and Pankwi Park (Incheon, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device may include a substrate including center and edge regions, active patterns on the substrate, channel patterns on the active patterns, source/drain patterns connected to the channel patterns, and gate electrodes on the channel patterns. Each of the source/drain patter...