ALEXANDRIA, Va., June 18 -- United States Patent no. 12,328,865, issued on June 10, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).
"Semiconductor device and method of fabricating the same" was invented by Jiwoon Park (Suwon-si, South Korea), Young-Geun Park (Suwon-si, South Korea) and Hojin Lee (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a semiconductor device comprising a substrate, a contact structure that penetrates the substrate, a bottom electrode on the substrate and connected to the contact structure, a dielectric layer that covers the bottom electrode, and a top electrode on the bottom electrode. The dielectric layer separates the top e...