US Patent Issued to SAMSUNG ELECTRONICS on June 10 for "Semiconductor device and method for fabricating the same" (South Korean Inventors)

ALEXANDRIA, Va., June 18 -- United States Patent no. 12,327,759, issued on June 10, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Semiconductor device and method for fabricating the same" was invented by Sang Cheol Na (Seoul, South Korea), Ki Chul Park (Suwon-si, South Korea), Seo Woo Nam (Seoul, South Korea) and Dong Ick Lee (Hwaseong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, a first interlayer insulating layer on the substrate, a lower wiring pattern inside the first interlayer insulating layer, an etch stop layer on the first interlayer insulating layer, a second interlayer insulating layer on the etch stop layer, a...