US Patent Issued to SAMSUNG ELECTRONICS on June 10 for "Bit line sense amplifier of semiconductor memory device and semiconductor memory device having the same" (South Korean Inventors)

ALEXANDRIA, Va., June 18 -- United States Patent no. 12,327,584, issued on June 10, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Bit line sense amplifier of semiconductor memory device and semiconductor memory device having the same" was invented by Donggeon Kim (Suwon-si, South Korea), Bok-Yeon Won (Suwon-si, South Korea), Selyung Yoon (Suwon-si, South Korea) and Jonghyuk Kim (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A bit line sense amplifier of a semiconductor memory device includes: sense amplifier blocks including a PMOS driver or an NMOS driver that detects and amplifies a signal difference between a bit line and a complimentary bit line, and sequen...