US Patent Issued to SAMSUNG ELECTRONICS on July 8 for "Transistor stacks having insulating spacers, and related fabrication methods" (New York, Virginia Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,356,689, issued on July 8, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Transistor stacks having insulating spacers, and related fabrication methods" was invented by Myung Yang (Niskayuna, N.Y.), Seung Min Song (Clifton Park, N.Y.) and Kang-Ill Seo (Springfield, Va.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Transistor devices are provided. A transistor device includes a substrate and a transistor stack including first and second transistors on the substrate. The first transistor or the second transistor includes a plurality of semiconductor channel layers, a gate on the plurality of semiconductor channel layers, and an insu...