ALEXANDRIA, Va., July 9 -- United States Patent no. 12,354,659, issued on July 8, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Three-dimensional semiconductor memory device and electronic system including the same" was invented by Seung Yoon Kim (Seoul, South Korea), Kohji Kanamori (Seongnam-si, South Korea) and Jeehoon Han (Hwaseong-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A three-dimensional semiconductor memory device includes: a stack structure including a ground selection line, first word lines, second word lines, and a string selection line, which are sequentially stacked on a substrate; vertical channel structures penetrating the stack structure and arra...