ALEXANDRIA, Va., July 9 -- United States Patent no. 12,356,635, issued on July 8, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Three-dimensional memory device including a variable resistance memory" was invented by Hyunmog Park (Seoul, South Korea) and Jungyu Lee (Hwaseong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A three-dimensional memory device includes: a plurality of word line groups including a plurality of word lines; a plurality of bit line groups extending in a vertical direction and including a plurality of bit lines spaced apart from the plurality of word lines; a plurality of memory cells arranged between the plurality of word lines and the plurality...